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www.kersemi.com 1 1/22/02 IRFR3412 irfu3412 v dss r ds(on) max i d 100v 0.025 ? 48a switch mode power supply (smps) motor drive bridge converters all zero voltage switching benefits applications low gate charge qg results in simple drive requirement improved gate, avalanche and dynamic dv/dt ruggedness fully characterized capacitance and avalanche voltage and current enhanced body diode dv/dt capability parameter max. units i d @ t c = 25c continuous drain current, v gs @ 10v 48 i d @ t c = 100 c continuous drain current, v gs @ 10v 34 a i dm pulsed drain current 190 p d @t c = 25 c power dissipation 140 w linear derating factor 0.95 w/ c v gs gate-to-source voltage 20 v dv/dt peak diode recovery dv/dt 6.4 v/ns t j operating junction and -55 to + 175 c t stg storage temperature range soldering temperature, for 10 second 300(1.6mm from case ) mounting torqe, 6-32 or m3 screw 10 lbf in (1.1n m) absolute maximum ratings symbol parameter min. typ. max. units conditions i s continuous source current mosfet symbol (body diode) ??? ??? showing the i sm pulsed source current integral reverse (body diode) ??? ??? p-n junction diode. v sd diode forward voltage ??? ??? 1.3 v t j = 25 c, i s = 29a, v gs = 0v t rr reverse recovery time ??? 68 100 ns t j = 125 c, i f = 29a q rr reverse recoverycharge ??? 160 240 nc di/dt = 100a/s i rrm reverse recoverycurrent ??? 4.5 6.8 a t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by l s +l d ) s d g diode characteristics 48 190 d-pak i-pak IRFR3412 irfu3412
2 parameter min. typ. max. units conditions g fs forward transconductance 25 ??? ??? sv ds = 50v, i d = 29a q g total gate charge ??? 59 89 i d = 29a q gs gate-to-source charge ??? 21 32 nc v ds = 50v q gd gate-to-drain ("miller") charge ??? 17 26 v gs = 10v, t d(on) turn-on delay time ??? 19 ??? v dd = 50v t r rise time ??? 68 ??? i d = 29a t d(off) turn-off delay time ??? 44 ??? r g = 6.8 ? t f fall time ??? 37 ??? v gs = 10v c iss input capacitance ??? 3430 ??? v gs = 0v c oss output capacitance ??? 270 ??? v ds = 25v c rss reverse transfer capacitance ??? 150 ??? pf ? = 1.0mhz c oss output capacitance ??? 1040 ??? v gs = 0v, v ds = 1.0v, ? = 1.0mhz c oss output capacitance ??? 170 ??? v gs = 0v, v ds = 80v, ? = 1.0mhz c oss eff. effective output capacitance ??? 270 ??? v gs = 0v, v ds = 0v to 80v dynamic @ t j = 25c (unless otherwise specified) ns parameter typ. max. units e as single pulse avalanche energy ??? 160 mj i ar avalanche current ??? 29 a e ar repetitive avalanche energy ??? 14 mj avalanche characteristics static @ t j = 25c (unless otherwise specified) parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 100 ??? ??? vv gs = 0v, i d = 250a ? v (br)dss / ? t j breakdown voltage temp. coefficient ??? 0.10 ??? v/ c reference to 25 c, i d = 1ma r ds(on) static drain-to-source on-resistance ??? ??? 0.025 ? v gs = 10v, i d = 29a v gs(th) gate threshold voltage 3.5 ??? 5.5 v v ds = v gs , i d = 250a ??? ??? 1.0 a v ds = 95v, v gs = 0v ??? ??? 250 v ds = 80v, v gs = 0v, t j = 150 c gate-to-source forward leakage ??? ??? 100 v gs = 20v gate-to-source reverse leakage ??? ??? -100 na v gs = -20v i gss i dss drain-to-source leakage current repetitive rating; pulse width limited by max. junction temperature. (see fig. 11) i sd 29a, di/dt 420a/s, v dd v (br)dss , t j 150 c starting t j = 25 c, l = 0.38mh, r g = 25 ? , i as = 29a, (see figure 12a) pulse width 300s; duty cycle 2%. c oss eff. is a fixed capacitance that gives the same charging time as c oss while v ds is rising from 0 to 80% v dss calculated continuous current based on maximum allowable junction temperature. package limitation current is 30a. parameter typ. max. units r jc junction-to-case ??? 1.05 r ja junction-to-ambient (pcb mount)* ??? 50 c/w r ja junction-to-ambient ??? 110 thermal resistance www.kersemi.com
3 fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 0.01 0.1 1 10 100 1000 0.1 1 10 100 20s pulse width t = 25 c j top bottom vgs 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v 4.5v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 4.5v 1 10 100 1000 0.1 1 10 100 20s pulse width t = 175 c j top bottom vgs 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v 4.5v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 4.5v 0.1 1 10 100 1000 4.0 5.0 6.0 7.0 8.0 9.0 v = 25v 20s pulse width ds v , gate-to-source voltage (v) i , drain-to-source current (a) gs d t = 25 c j t = 175 c j -60 -40 -20 0 20 40 60 80 100 120 140 160 180 0.0 0.5 1.0 1.5 2.0 2.5 3.0 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 10v 48a www.kersemi.com
4 fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 0.0 0.5 1.0 1.5 2.0 2.5 3.0 v sd , source-todrain voltage (v) 0.1 1.0 10.0 100.0 1000.0 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25 c t j = 175 c v gs = 0v 1 10 100 1000 v ds , drain-tosource voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25 c tj = 175 c single pulse 1msec 10msec operation in this area limited by r ds (on) 100sec 1 10 100 v ds , drain-to-source voltage (v) 100 1000 10000 100000 c , c a p a c i t a n c e ( p f ) coss crss ciss v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd 0 20406080100 q g total gate charge (nc) 0 4 8 12 16 20 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 80v vds= 50v vds= 20v i d = 29a www.kersemi.com
5 fig 10a. switching time test circuit v ds 90% 10% v gs t d(on) t r t d(off) t f fig 10b. switching time waveforms
1 0.1 % + - fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) 25 50 75 100 125 150 175 0 10 20 30 40 50 t , case temperature ( c) i , drain current (a) c d limited by package www.kersemi.com
6 25 50 75 100 125 150 175 0 50 100 150 200 250 300 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom 12a 21a 29a q g q gs q gd v g charge d.u.t. v ds i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - fig 13b. gate charge test circuit fig 13a. basic gate charge waveform fig 12b. unclamped inductive waveforms fig 12a. unclamped inductive test circuit t p v (br)dss i as fig 12c. maximum avalanche energy vs. drain current r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v v gs www.kersemi.com
7 p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop r e-applied v oltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period + - + + + - - - fig 14. for n-channel hexfet power mosfets

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6.73 (.265) 6.35 (.250) - a - 4 1 2 3 6.22 (.245) 5.97 (.235) - b - 3x 0.89 (.035) 0.64 (.025) 0.25 (.010) m a m b 4.57 (.180) 2.28 (.090) 2x 1.14 (.045) 0.76 (.030) 1.52 (.060) 1.15 (.045) 1.02 (.040) 1.64 (.025) 5.46 (.215) 5.21 (.205) 1.27 (.050) 0.88 (.035) 2.38 (.094) 2.19 (.086) 1.14 (.045) 0.89 (.035) 0.58 (.023) 0.46 (.018) 6.45 (.245) 5.68 (.224) 0.51 (.020) min. 0.58 (.023) 0.46 (.018) lead assignments 1 - gate 2 - drain 3 - source 4 - drain 10.42 (.410) 9.40 (.370) notes: 1 dimensioning & tolerancing per ansi y14.5m, 1982. 2 controlling dimension : inch. 3 conforms to jedec outline to-252aa. 4 dimensions shown are before solder dip, solder dip max. +0.16 (.006). i n t e r n a t i o n a l l o g o r e c t i f i e r 3 4 1 2 i r f u 1 2 0 9 1 6 a l o t c o d e a s s e m b l y e x a m p l e : w i t h a s s e m b l y t h i s i s a n i r f r 1 2 0 y e a r 9 = 1 9 9 9 d a t e c o d e l i n e a w e e k 1 6 i n t h e a s s e m b l y l i n e " a " a s s e m b l e d o n w w 1 6 , 1 9 9 9 l o t c o d e 1 2 3 4 p a r t n u m b e r www.kersemi.com
9 i r f u 1 2 0 9 1 9 a r e c t i f i e r l o g o i n t e r n a t i o n a l a s s e m b l y l o t c o d e 5 6 7 8 e x a m p l e : w i t h a s s e m b l y t h i s i s a n i r f r 1 2 0 w e e k 1 9 l i n e a y e a r 9 = 1 9 9 9 d a t e c o d e p a r t n u m b e r i n t h e a s s e m b l y l i n e " a " a s s e m b l e d o n w w 1 9 , 1 9 9 9 l o t c o d e 5 6 7 8

6.73 (.265) 6.35 (.250) - a - 6.22 (.245) 5.97 (.235) - b - 3x 0.89 (.035) 0.64 (.025) 0.25 (.010) m a m b 2.28 (.090) 1.14 (.045) 0.76 (.030) 5.46 (.215) 5.21 (.205) 1.27 (.050) 0.88 (.035) 2.38 (.094) 2.19 (.086) 1.14 (.045) 0.89 (.035) 0.58 (.023) 0.46 (.018) lead assignments 1 - gate 2 - drain 3 - source 4 - drain notes: 1 dimensioning & tolerancing per ansi y14.5m, 1982. 2 controlling dimension : inch. 3 conforms to jedec outline to-252aa. 4 dimensions show n are before solder dip, solder dip max. +0.16 (.006). 9.65 (.380) 8.89 (.350) 2x 3x 2.28 (.090) 1.91 (.075) 1.52 (.060) 1.15 (.045) 4 1 2 3 6.45 (.245) 5.68 (.224) 0.58 (.023) 0.46 (.018) www.kersemi.com
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tr 16.3 ( .641 ) 15.7 ( .619 ) 8.1 ( .318 ) 7.9 ( .312 ) 12.1 ( .476 ) 11.9 ( .469 ) feed direction feed direction 16.3 ( .641 ) 15.7 ( .619 ) trr trl notes : 1. controlling dimension : millimeter. 2. all dimensions are shown in millimeters ( inches ). 3. outline conforms to eia-481 & eia-541. notes : 1. outline conforms to eia-481. 16 mm 13 inch www.kersemi.com

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